XPS/NMR show Ar⁺ sputtering cleans BmImPF6 surface without bulk change. Findings highlight how liquid fluidity drives unique impurity segregation, advancing surface analysis of ionic liquids. doi.org/10.1116/6.00...

Computational investigations of area-selective #ALDep require realistic & suitable chemical models - authors from @unileipzig.bsky.social show the impact of this choice for AS-ALD modelling using SMIs on silica. doi.org/10.1116/6.00...

A streamlined oxide MBE approach enables epitaxial SrTiO₃/GaAs with abrupt interfaces, advancing practical integration of functional oxides with III–V technologies. doi.org/10.1116/6.00...

XPS results can differ significantly depending on whether a sample is electrically grounded or electrically isolated. This distinction highlights the importance of considering the sample's work function to obtain correct interpretations. doi.org/10.1116/6.00...

JVST is proud to be a part of this impressive portfolio! 🏅

We're pleased to share 2025 metrics from our #MaterialsScience portfolio! 👏 We can't wait to see what the future continues to bring to our community of authors, reviewers, and readers! 🔗 https://aippub.org/4qD0c7v

Authors from Ionoptika, Ltd. and Cambridge Univ. team up to expand the use of SIMS in materials analysis by exploring the use of a variety of giant gas cluster ion beams in sputtering & depth profiling of complex inorganic/organic materials. doi.org/10.1116/6.00...

Boron nitride is stable up to about 900 degrees Celsius and exhibits excellent thermal conductivity, making it a useful material for dissipating heat in electronics, batteries, and other high-temperature applications. #Scilight Learn more 👇 https://aippub.org/3OAc6BK

We invite researchers to submit abstracts for the International Workshop on Gallium Oxide and Related Materials (#IWGO2026) August 2-7, 2026, in College Park, Maryland ⏳Submit by March 18, ▶️https://iwgo2026.avs.org/ ▶️https://conta.cc/49LmxcR #GalliumOxide

Authors from @uni-magdeburg.de use the pyroelectric effect to create a compact, energy-efficient X-ray source & show a performance boost by moving from single to double-crystal config. This opens the door to portable, low-power systems for materials analysis. doi.org/10.1116/6.00...

In #JVSTB, researchers present a tabletop EUV test platform designed for lab-scale evaluation of lithography materials to reduce reliance on large, costly facilities while still enabling reliable measurements doi.org/10.1116/6.00...

Residues left behind from vapor deposition experiments can significantly influence film growth. Researchers from @ox.ac.uk show how residual TPPO alters perovskite crystallization behavior, marking contamination control as critical for vacuum-based processing. doi.org/10.1116/6.00...

Researchers from @uchicagopme.bsky.social and @berkeleylab.lbl.gov explore why certain “smart” material tweaks don’t work the way we expect—and how to design around that reality. doi.org/10.1116/6.00...

This study describes a machine-learning algorithm using attention-based CNNs, offering the first dataset and high-accuracy, context-aware characterization of silicon microstructures for field-emission tip analysis. doi.org/10.1116/6.00...

The Li-ion battery is essential for powering our everyday devices.💻📱 Developing rechargeable LIBs w/ high power density & durability requires understanding the reactions that occur during charging & discharging. doi.org/10.1116/6.00...

Selective, solvent-free nanoscale patterning is crucial as devices integrate more sensitive & unconventional materials. From @gatechengineers.bsky.social, this work presents an all-water-based electron beam lithography approach w/ polyacrylic acid hydrogel as a resist. doi.org/10.1116/6.00...

Authors from @tyndallinstitute.bsky.social use theoretical modeling to predict #ALDep chemistry of Ru on TaN using a RuO₄ precursor — an area of growing importance for advanced interconnect stacks. doi.org/10.1116/6.00...

#ALEtch is a promising technique for the nanofabrication of thin-film lithium niobate, used in nanophotonics. Authors from @caltech.edu & @unevadareno.bsky.social report an atomically precise etch process which could enable unprecedented device performance. doi.org/10.1116/6.00...

Multilayer oxide structures with: High precision? ✅ Complex lithography? ❌ Multiple masking steps? ❌ Authors from Ghent University demonstrate a polymer-assisted AS-ALD method that allows stacked multilayer oxides to be formed with a single polymer template. doi.org/10.1116/6.00...

From @princeton.edu & TEL Technology Center, Americas, authors develop a diffusion–reaction model of spatial & temporal evolution of reactive species during plasma-assisted #ALEtch. It links diffusion, reaction kinetics, & ion-driven effects in a physically meaningful way. doi.org/10.1116/6.00...

From @colorado.edu & SEMES, authors use thermal #ALEtch on SnO₂ with sequential self-limiting ligand-exchange/conversion & fluorination reactions. Self-limiting surface chemistry enables controlled, atomic-scale removal of SnO₂ with purely thermal processes. doi.org/10.1116/6.00...

From the @uarkansas.bsky.social, authors employ a unique #MBE strategy to grow GeSn at low substrates temps & low fluxes, resulting in crystalline films with high Sn content. This paves a promising path for silicon-based photonic and quantum device applications with GeSn! doi.org/10.1116/6.00...

Recently highlighted, this article is now featured on our latest cover of #JVSTA! Next time you publish with us, submit an eye-catching image for the cover. We would love to feature your research, too! Read this featured article here: doi.org/10.1116/6.00...

Authors from @pennstateuniv.bsky.social use Raman spectroscopy to investigate the fundamental effects of metal-induced doping on different MoS₂ epilayer thicknesses, helping to tailor MoS₂ devices to meet the demands of advanced electronic applications. doi.org/10.1116/6.00...

Happy Holidays from our team! Wishing you the best during this holiday season and into the new year. We look forward to sharing more exciting research with you in 2026.✨

Featured on the latest #JVSTA cover, Joshua Wagner & Steven J. Sibener from the University of Chicago investigate how atomic oxygen affects the behavior of C₆₀ molecules on 2D materials. Read the featured article here! doi.org/10.1116/6.00...

Researchers from Tokyo Electron & TEL Technology Center, Americas demonstrate a novel etching process capable of fabricating 3D-NAND memory channel hole structures with a depth of 10 μm and an aspect ratio of 100. doi.org/10.1116/6.00...

Electron beam generated plasmas are useful in the production of ion-ion plasmas due to their low electron temp. Authors examine characteristics of these plasmas in Ar/SF₆ & Ar/NF₃ mixtures, linking them to the efficacy of the F layer growth process. doi.org/10.1116/6.00...

A major challenge in improving thermoelectric materials is understanding how structural & substrate effects impact performance. Here, authors study the effect various qualities of FeSi films grown on Si substrates have on key transport properties. doi.org/10.1116/6.00...

Researchers from @caltech.edu are pushing electron-beam lithography to the true single-nanometer frontier! In this study, authors describe two new resists that can reliably pattern features as small as 5 nm—even in 100-nm-thick films. doi.org/10.1116/6.00...

A hybrid sputtering approach combining low-energy Cs+ with Ar-GCIB enhances inorganic sputtering while preserving organic signals, enabling accurate TOF-SIMS depth profiling of inorganic-organic multilayers. doi.org/10.1116/6.00...

What hidden surface chemistry governs when ammonium fluorosilicate forms during SiNx etching—& why does it only sometimes cause an etch stop? Researchers from @coschoolofmines.bsky.social & @lamresearch.com explore variables impacting etching using ATR–FTIR spectroscopy. doi.org/10.1116/6.00...

PtSi has lots of applications due to its unique metallic & superconducting properties, promising for the scalability of quantum computing systems. Authors from @brookhavenlab.bsky.social Lab provide reference XPS data for the material for use as its applications expand. doi.org/10.1116/6.00...

Type-II band alignment in p-NiO/n-(AlGa)₂O₃ lets holes stay confined while electrons escape easily. Tunable offsets via Al content boost rectifier performance and guide next-gen power device design. doi.org/10.1116/6.00...

Cryogenic ToF-SIMS imaging preserved native lipid distributions in 3D spheroids, unlike air-dried samples that caused water loss and lipid migration artifacts. doi.org/10.1116/6.00...

Authors from the U.S. Naval Research Laboratory & Purdue University utilize #ALDep of Al₂O₃ on BNNT fabrics to enhance their high-temperature stability limit, a method that could potentially to do the same for other nanoporous materials. doi.org/10.1116/6.00...

Low-temp #ALDep supercycles insert trace Al into TiN, forming TiAlN with a tunable effective work function while keeping conductivity—enabling a dual-compatible metal-gate electrode for both n-type & p-type MOSFETs. doi.org/10.1116/6.00...

Authors from @helsinki.fi describe a self-limiting #ALEtch process for etching molybdenum using O₂ + NbCl₅ - offering isotropic & selective etching with high control. Promising for the future development of interconnects for microelectronics! doi.org/10.1116/6.00...

Direct atomic layer processing breaks #ALDep free from vacuum limits! It prints ALD-quality TiO₂ layers at ambient pressure with no overspray, ultra-smooth films, & at speeds up to 200 mm/s—high-throughput, precision nanofab made easy. doi.org/10.1116/6.00...

New #machinelearning modeling approach called ST-GWP combines self-training and ensemble methods to predict global warming potential with high accuracy & no experiments. # of halogen atoms and electron properties are key factors. doi.org/10.1116/6.00...

Tabletop EUV system enables quick, reliable testing of photoresists, supporting faster R&D for next-gen semiconductor manufacturing. doi.org/10.1116/6.00...

Graphene solar cells power IoT sensors with no batteries! ☀️ Authors from @uarkansas.bsky.social & @umich.edu show how series-connected cells charge capacitors in minutes, running a temperature sensor for 24+ hours—ultralow power, long-life, fully autonomous. doi.org/10.1116/6.00...

A new suspended Ge-on-Si infrared absorber design with backside holes + an Al reflector boosts 1550-nm absorbance to 59% and doubles responsivity. Big promise for the future of optoelectronics! doi.org/10.1116/6.00...

Researchers from USC create an analog stochastic Boolean satisfiability solver and accelerate multiple patterning layout decomposition by 100× through inherent parallelism, enabling faster NP-complete problem solving in VLSI design. doi.org/10.1116/6.00...

📢Attention #ALDep and #ALEtch researchers - #ALDALE2026 is now accepting abstracts through February 5. Join us in 🌴Tampa, FL for the AVS 26th International Conference on Atomic Layer Deposition & the 13th Atomic Layer Etching Workshop. #AtomicLayerDeposition #AtomicLayerEtching ald2026.avs.org

Featured on our most recent #JVSTB cover, researchers from AIST in Japan highlight the critical importance of interparticle contact in optimizing all-solid-state battery performance, offering valuable insights for improving battery design.🔋 doi.org/10.1116/6.00...

Researchers from @thermofishersci.bsky.social investigate emission profiles & uniformity of electron emitters with varying radii, enabling end-users to choose the best emitters for their needs, including enhancing multibeam applications. doi.org/10.1116/6.00...

Compared to commercial Si x-ray detectors, a Ni/Au β-Ga₂O₃ Schottky barrier diode shows 14× higher sensitivity at 500 K with fast response & low noise — ideal for harsh environments. doi.org/10.1116/6.00...

New study from @helsinki.fi shows phenol can selectively block Ru growth in AS-ALD. Phenol inhibits Ru on W, TiN, HfO₂ & ZrO₂, enabling high selectivity (>0.8) for up to 1000 ALD cycles. doi.org/10.1116/6.00...

Authors from the Indian Institute of Technology present a novel approach using magnetron sputtering for the deposition of p-type SnOx films via Ge doping, which is a topic of significance for optical & electrical applications based on semiconductor oxides. doi.org/10.1116/6.00...